Ferroelectric properties of Bi3.25La0.75Ti3O12 thin films grown on the highly oriented LaNiO3 buffered PtÕTiÕSiO2 ÕSi substrates
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چکیده
Bi3.25La0.75Ti3O12 ~BLT! thin films were grown on Pt/Ti/SiO2 /Si and on LaNiO3 ~LNO! buffered Pt/Ti/SiO2 /Si substrates using sol-gel processing. Scanning electron micrographs showed the BLT films are composed of peg-like or platelet-like grains depending upon annealing temperature and the substrate type. Large platelet grains were found in BLT films deposited on the LNO/Pt/Ti/SiO2 /Si substrates; those thin films showed better polarization–voltage, capacitance–voltage, and current– voltage characteristics. More importantly, they did not show any significant fatigue up to 2310 switching cycles at a frequency of 1 MHz and electric field 85 kV/cm. © 2003 American Institute of Physics. @DOI: 10.1063/1.1539928#
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تاریخ انتشار 2003